Compound Semiconductor Device Characterization Intern
Keysight Technologies, Inc.About the role
Overview
Keysight is at the forefront of technology innovation, delivering breakthroughs and trusted insights in electronic design, simulation, prototyping, test, manufacturing, and optimization. Our ~16,800 employees create world-class solutions in communications, 5G, automotive, energy, quantum, aerospace, defense, and semiconductor markets for customers in over 100 countries. Learn more about what we do. Our award-winning culture embraces a bold vision of where technology can take us and a passion for tackling challenging problems with industry-first solutions. We believe that when people feel a sense of belonging, they can be more creative, innovative, and thrive at all points in their careers.
Responsibilities
Join a team at the forefront of semiconductor innovation, enabling the breakthrough technologies that differentiate Keysight's industry-leading design enablement solutions. As a Characterization Intern you will work hands-on with some of the world's most advanced compound semiconductor ICs that power next-generation RF, microwave, millimeter-wave, and high-speed digital products. In this role, you will play a critical part in evaluating cutting-edge technologies to the meet the demanding performance, quality, and lifetime expectations of Keysight customers. You will collaborate closely with device engineers to evaluate, qualify, and continuously improve the technologies that form the foundation of Keysight's product leadership. If you are excited by advanced semiconductor technology, data-driven problem solving, and the challenge of ensuring reliability in products operating at the leading edge of performance, this internship offers an opportunity to make a visible and lasting impact.
What You'll Do
Collaborate with device engineers in the electrical characterization and analysis of advanced semiconductor devices used in high-performance RF, microwave, and millimeter-wave applications. Perform transistor and diode measurements using laboratory test e
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