Intern - HBM Design Architect | MS or PhD Student

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. About the Team At Micron Technology, we transform how the world uses information to enrich life for all. The Heterogeneous Integration Group (HIG) HBM Architecture team develops next-generation High-Bandwidth Memory (HBM) solutions that enable advancements in Artificial Intelligence, high-performance computing, networking, and data center technologies. The team collaborates across architecture, design, verification, packaging, product engineering, and system engineering to evaluate innovative memory technologies and drive future product development. Position Overview As an HBM Design Architect Intern, you will work alongside experienced architects and engineers to evaluate HBM and DRAM architecture concepts, develop analytical models, and investigate design tradeoffs affecting performance, power, thermal behavior, reliability, and manufacturability. This internship provides hands-on experience in semiconductor architecture analysis while offering opportunities to leverage AI Assisted engineering workflows, Large Language Models (LLMs), and Generative AI technologies to support design exploration and engineering productivity.

Responsibilities

Analyze HBM and DRAM architecture tradeoffs related to timing, bandwidth, power, area, thermal performance, reliability, and design complexity using analytical, simulation, and AI Assisted methodologies. Develop first-order models, simulations, and data-analysis tools to compare design alternatives, identify key sensitivities, and support architecture pathfinding studies. Collaborate with architecture, circuit design, verification, layout, packaging, product, and system engineering teams to evaluate implementation feasibility and t